Unisantis - Company Profile

Unisantis develops surrounding gate transistor semiconductor technology. It creates a three-dimensional transistor where all three electrodes (source, gate and drain) are placed in the vertical plane with the gate electrode surrounding a silicon column. It claims to have multiple features including less area occupancy, three times higher electron mobility, ideal sub-threshold swing, short-channel effect suppression and is also claimed to provide lower power consumption and higher operating speed. The company collaborated with Institute of Microelectronics, Singapore in 2007 for research and development of its products. In 2016, the company collaborated with IMEC to develop an ultra-scaled EUV-enabled 6T SRAM based on SGT technology.