When was Flosfia founded?

Flosfia was founded in 2011 and raised its 1st funding round 6 years after it was founded.

Where is Flosfia located?

Flosfia is headquartered in Kyoto, Japan.

How many employees does Flosfia have?

As of Mar 31, 2026, the latest employee count at Flosfia is 3.

Is Flosfia a funded company?

Flosfia is a funded company, having raised a total of $14.2M across 4 funding rounds to date. The company's 1st funding round was a $***** Series B round, raised on Mar 02, 2017.

When was the latest funding round of Flosfia?

Flosfia's latest funding was a $***** Series E round on Mar 26, 2021, with participation from 0 investor.

Where does Flosfia rank among its competitors?

Flosfia ranks 7th amongst 76 active competitors, of which 22 are funded. It stands 5th in terms of total funding among its competitors. The most recent competitor to raise funding was AGNIT Semiconductors, which secured $2.6M in Mar, 2026.

Who are the top competitors of Flosfia?

Flosfia's top competitors include Cambridge GaN Devices, AGNIT Semiconductors and Diamond Foundry. Among them, AGNIT Semiconductors secured the most recent funding round in March, 2026.

Flosfia - 2026 Company Profile, Team, Funding & Competitors

Flosfia is a series E company based in Kyoto (Japan), founded in 2011 by Toshimi Hitora. It operates as a Developer of gallium oxide power semiconductors and thin film deposition solutions. Flosfia has raised $14.2M in funding. The company has 76 active competitors, including 22 funded and 10 that have exited. Its top competitors include companies like Cambridge GaN Devices, AGNIT Semiconductors and Diamond Foundry.

Company Details

Developer of gallium oxide power semiconductors and thin film deposition solutions. It develops and manufactures power semiconductor devices using gallium oxide (Ga2O3), a material known for its low energy loss and cost-effectiveness. The company also offers thin film deposition services using its proprietary "Mist Dry®" technology, enabling high-quality film formation without vacuum equipment. This technology is applicable to various materials and applications, including electronic components and battery materials. The company supports clients with testing, material evaluation, and supply of materials produced using this method.

Website: flosfia.com
Email ID: *****@flosfia.com

Key Metrics

Founded Year

2011

Location

Kyoto, Japan

Stage

Series E

Total Funding

$14.2M in 4 rounds

Latest Funding Round

Series E, Mar 26, 2021, $*****

Investors

Eight Roads Ventures & 9 more

Ranked

7^th among 76 active competitors

Employee Count

3 as on Mar 31, 2026

Similar Companies

Cambridge GaN Devices & 7 more

View Flosfia's full profile

Flosfia has raised a total funding of $14.2M over 4 rounds. Its first funding round was on Mar 02, 2017. Flosfia has 10 institutional investors.

Here is the list of recent funding rounds of Flosfia:

Filter this list

Date of Funding	Funding Amount	Round Name	Post-Money Valuation	Revenue Multiple	Lead Investors	Other Investors
Mar 26, 2021	7888621	Series E	3768457	3668648	5189462	9289065
Jan 04, 2018	8378177	Series C	2781864	1845049	1599988	DENSO
2017	4902	Series B	9770	3884	5771	Eight Roads Ventures

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View details of Flosfia's funding rounds and investors

The founders of Flosfia is Toshimi Hitora. Takashi Shito is the CEO of Flosfia.

Here are the details of Flosfia's key team members:

Toshimi Hitora: Founder & Chairman of Flosfia.
Contact Info: 1 email address
Takashi Shito: CEO of Flosfia.

View details of Flosfia's Founder profiles and Board Members

Flosfia's employee count trend

Flosfia has 3 employees as of Mar 26. Here is Flosfia's employee count trend over the years:

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Top competitors of Flosfia include Cambridge GaN Devices, AGNIT Semiconductors and Diamond Foundry. Here is the list of Top 10 competitors of Flosfia, ranked by Tracxn score:

Rank	Company Details	Short Description	Total Funding	Investors	Tracxn Score
1st	Cambridge GaN Devices 2016, Taiwan, Series C	Developer of gallium nitride transistors and semiconductors for power electronics	$60M	Parkwalk, BGF & 26 others	62/100
2nd	AGNIT Semiconductors 2019, Bengaluru (India), Seed	Manufacturer of gallium nitride (GaN) semiconductors for radio-frequency applications	$7.47M	3one4 Capital, Zephyr Peacock & 2 others	60/100
3rd	Diamond Foundry 2012, San Francisco (United States), Series D	Technology company that specializes in creating diamonds using sustainable and eco-friendly methods	$315M	GEA CAPITAL, Future Shape & 7 others	57/100
4th	AXT 1986, Fremont (United States), Public	Compound semiconductor substrate manufacturers	-	Herald Investment Management, Fortune Venture Investment Group ... Read more	55/100
5th	HexaTech 2001, United States, Series B	Manufacturer of high-quality aluminum nitride substrates for semiconductor devices	$11.6M	Intersouth Partners, H.I.G. Capital & 4 others	54/100
6th	Tagore 2011, Arlington Heights (United States), Series A	Provider of GaN semiconductor technology for RF and power applications	$8.69M	Celesta Capital, America’s Seed Fund	53/100
7th	Flosfia 2011, Kyoto (Japan), Series E	Developer of gallium oxide power semiconductors and thin film deposition solutions	$14.2M	Eight Roads Ventures, Mirai Creation Fund ... & 8 others	51/100
8th	AKHAN Semiconductor 2012, Gurnee (United States), Series B	Provider of synthetic diamond materials for the semiconductor industry	$25.7M	-	51/100
9th	Atomera 2001, Los Gatos (United States), Public	Developed a new patented material that enhances transistors performance.	$33.6M	Vulpes Ventures	49/100
10th	SweGaN 2014, Linkoping (Sweden), Series A	Manufacturer of custom-made epitaxial wafers	$12.5M	Mount Wilson Ventures, Atlantic Bridge & 9 others	49/100